New Product
SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
1 8
V GS = 10 thr u 5 V
4 V
5
4
3
T C = 25 °C
12
6
3 V
2
1
T C = 125 °C
0
0
T C = - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
0.060
0.052
0.044
0.036
0.02 8
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS = 4.5 V
V GS = 10 V
8 00
640
4 8 0
320
160
C oss
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
C iss
0.020
0
C rss
0
6
12
1 8
24
30
0
6
12
1 8
24
30
10
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current
1. 8
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
8
I D = 5 A
V DS = 10 V
1.6
I D = 5 A
V GS = 10 V
6
V DS = 20 V
1.4
V DS = 30 V
1.2
V GS = 4.5 V
4
1.0
2
0
0. 8
0.6
0.0
2.5
5.0
7.5
10.0
12.5
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
4
Q g - Total Gate Charge (nC)
Gate Charge
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
相关PDF资料
SUD50P04-13L-E3 MOSFET P-CH D-S 40V TO252
SUD50P04-23-E3 MOSFET P-CH D-S 40V TO252
SUD50P04-40P-T4-E3 MOSFET P-CH D-S 40V TO252
SUD50P06-15L-T4-E3 MOSFET P-CH D-S 60V TO252
SUD50P08-26-E3 MOSFET P-CH D-S 80V TO252
SUD50P10-43-E3 MOSFET P-CH D-S 100V TO252
SUD50P10-43L-E3 MOSFET P-CH D-S 100V TO252
SUM110N04-2M1P-E3 MOSFET N-CH D-S 40V D2PAK
相关代理商/技术参数
SUD50NP04-77P-T4-E3 功能描述:MOSFET 40V 8.0A 10.8/24W 37/40mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50NP04-94-T4-E3 功能描述:MOSFET 40V 8.0A 13.2/15.6W 41/53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50P04-08 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:P-Channel 40-V (D-S) MOSFET
SUD50P04-08-GE3 功能描述:MOSFET 40V 50A P-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50P04-08-GE3 制造商:Vishay Siliconix 功能描述:MOSFET P CH -40V -50A TO-252-3 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, -40V, -50A, TO-252-3
SUD50P04-09L 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK 制造商:Vishay Intertechnologies 功能描述:P-CH 40V 50A *NIC*
SUD50P04-09L_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 40-V (D-S), 175 °C MOSFET
SUD50P04-09L-E3 功能描述:MOSFET 40V 50A 136W 9.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube